Research Profile
Silicon-germanium in the hexagonal crystal polytype has recently emerged as a new direct bandgap semiconductor promises to become the essential brick that was missing in the silicon industry. Hex-SiGe promises to integrate opto-electronic capabilities into the silicon industry. Research is directed towards a hex-SiGe laser, an optical amplifier, a detector as well as to low-dimensional hex-SiGe semiconductors like quantum wells and dots.
Meet some of our Researchers
Recent Publications
Our most recent peer reviewed publications
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Direct bandgap quantum wells in hexagonal Silicon Germanium
Nature Communications (2024) -
Direct Bandgap Type I Hexagonal Germanium/Silicon-Germanium Quantum Wells
(2024) -
Low Surface Recombination in Hexagonal SiGe Alloy Nanowires
ACS Applied Nano Materials (2024) -
Optimization of the efficiency of a nanowire solar cell by nanowire tapering
Journal of Applied Physics (2023) -
Efficiency enhancement in a lensed nanowire solar cell
Journal of Applied Physics (2023)
Contact
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Visiting address
Flux, room 2.108De Groene Loper 195612 AP EindhovenNetherlands -
Postal address
P.O. Box 5135600 MB EindhovenNetherlands -
Postal address
P.O. Box 5135600 MB EindhovenNetherlands -
Secretarysecretariaat.and@ tue.nl